| PATENT ASSIGNEE'S COUNTRY | USA |
| UPDATE | 10.00 |
| PATENT ASSIGNEE | This data is not available for free |
| PATENT CLAIMS |
Method of forming metal-contg film on a substrate - Providing metal source reagent compn comprising at least one metalorganic complex whose metal constituent is a metal comp of the metal-contg film, & a solvent or suspen ding agent - Volatilizing said compn to yield metal source vapor - Contacting metal source vapor with substrate under CVD conditions to deposit the metal-contg film on substrate, Wherein said metal source reagent compn comprises metalorganic complex of formula - M(A)yX - M = y-valent metal - A = mono- or multi-dentate organic ligand coordinated to M which allows complexing MAy with X - y = 2-4 - X = Mono- or multi-dentate ligand coordinated to M & contg > one atoms selected from: C,N,H,S,O & F |
| PATENT PHOTOCOPY | Available on request |
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