| PATENT NUMBER | This data is not available for free |
| PATENT GRANT DATE | April 13, 1999 |
| PATENT TITLE |
Method for manufacturing an alumina-silicon carbide nanocomposite |
| PATENT ABSTRACT |
A method of manufacturing an alumina-silicon carbide nanocomposite having particular application to improved ball bonding capillaries of a wire bonding device produces a structure with a 93-98 volume percent of .alpha.-alumina having an average diameter of 0.1-0.3 .mu.m, a 2-7 volume percent of .beta.-silicon carbide having an average diameter of 0.1-1.5 .mu.m, a bending strength of 340-550 Mpa, and a toughness of 3.3-4.1 Mpam.sup.1/2. |
| PATENT INVENTORS | This data is not available for free |
| PATENT ASSIGNEE | This data is not available for free |
| PATENT FILE DATE | October 16, 1997 |
| PATENT FOREIGN APPLICATION PRIORITY DATA | This data is not available for free |
| PATENT CLAIMS |
What is claimed is: 1. A method of manufacturing an alumina-silicon carbide nanocomposite for ball bonding capillaries of a wire bonding device, comprising the steps of: mechanically mixing 93-98 volume percent of .alpha.-alumina, having an average diameter of 0.1-0.3 .mu.m, and 2-7 volume percent of .beta.-silicon carbide, having an average diameter 0.1-1.5 .mu.m, in a dispersal organic solvent for 0.5-4 hours through a ball milling process; drying said dispersal organic solvent of the mixture, thus forming dried powder; filtering said dried powder by a screen; pressurizing the filtered powder in a mold at a pressure of 2500-3500 psi, thus preforming the filtered powder into a preformed material; forming the preformed material at a pressure of 45000-55000 psi for 1.5-3 minutes through a cold hydrostatic pressurizing process, thus forming a formed material; and sintering the formed material at a temperature of 1600-1800.degree. C. and at atmospheric pressure for 3-5 hours in an inert atmosphere, thus forming an alumina-silicon carbide nanocomposite having a bending strength of 340-550 MPa and a toughness of 3.3-4.1 MPam.sup.1/2. 2. The method as claimed in claim 1, wherein the content and average diameter of said .alpha.-alumina are 94-96 volume percent and 0.15-0.25 .mu.m respectively, and the content and average diameter of said .beta.-silicon carbide are 4-6 volume percent and 0.15-0.25 .mu.m respectively, so that the bending strength and toughness of said alumina-silicon carbide nanocomposite are 460-520 MPa and 3.5-3.7 MPam.sup.1/2, respectively. 3. The method as claimed in claim 1, further comprising the step of annealing said sintered material at a temperature of 1250-1350.degree. C. for 1.5-2.5 hours after the sintering step, thus forming an alumina-silicon carbide nanocomposite having a bending strength of 510-550 MPa and a toughness of 3.5-3.7 MPam.sup.1/2. 4. The method as claimed in claim 1, wherein said dispersal organic solvent used in the drying step is a methanol or ethanol, and said inert atmosphere used in the sintering step is an argon or nitrogen gas atmosphere. -------------------------------------------------------------------------------- |
| PATENT DESCRIPTION |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates, in general, to an alumina-silicon carbide nanocomposite for ball bonding capillaries of a wire bonding device and method of manufacturing such an alumina-silicon carbide nanocomposite and, more particularly, to an alumina-silicon carbide nanocomposite, having high strength and toughness and being preferably used for ball bonding capillaries of a wire bonding device, the bonding device used for electrically connecting conductive traces to the input/output pads of a semiconductor chip during a semiconductor package manufacturing process. 2. Description of the Prior Art As well known to those skilled in the art, an automatic wire bonding device in the fabricating processes of semiconductor packages is used for electrically connecting a lead frame, ceramic circuit board, printed circuit board, etc., which is used as an outer connecting passage of a package, to input/output pads or dies of a semiconductor chip with gold or aluminum wires. In such an automatic wire bonding device, a ball bonding wire, having a thickness of 1.0-1.3 mil(1 mil=1/1000 inch), is received into the fine hole of a capillary which is requisite for wire bonding processes. In such a wire bonding process, the capillary is primarily heated to about 200.degree. C. with a heat source. The capillary is secondly heated to about 270.degree. C. with vibrations of ultrasonic waves, which are generated by a transducer. The capillary is also operated under a discharge state caused by a high voltage discharge blade, thus forming bonding balls. That is, the capillary has to be subjected to a coarse atmosphere during a wire bonding process so that the capillary has to be made of ceramic, suitable for enduring such a coarse atmosphere. A sintered alumina(Al.sub.2 O.sub.3) having a purity of 99.99% or more, has been used for such a ceramic capillary. Such a pure sintered alumina preferably has a high strength of about 330 MPa and is suitable for conserving the manufacturing cost of capillaries. However, such an alumina has a low rupture toughness of about 3.0 MPam.sup.1/2, thus deteriorating the operational reliability of resulting capillaries. Also, the durability of the alumina is deteriorated at a high temperature because the strength of the alumina is rapidly reduced at such a high temperature. Therefore, the life span of such a pure sintered alumina is shortened due to such a thermally reduced strength, thus increasing the manufacturing cost of packages. SUMMARY OF THE INVENTION Accordingly, the present invention has been made in view of the above problems occurring in the prior art, and an object of the present invention is to provide an alumina-silicon carbide nanocomposite for ball bonding capillaries, having a good operational reliability and durability with improved mechanical properties such as an improved strength, toughness and hardness, thereby increasing the expected life span of the alumina. Another object of the present invention is to provide a method of manufacturing such an alumina-silicon carbide nanocomposite. In order to accomplish the first object, the present invention provides an alumina-silicon carbide nanocomposite for ball bonding capillaries of a wire bonding device, comprising: 93-98 volume percent of .alpha.-alumina having an average diameter of 0.1-0.3 .mu.m; and 2-7 volume percent of .alpha.-silicon carbide having an average diameter of 0.1-1.5 .mu.m, so that said alumina-silicon carbide nanocomposite has a bending strength of 340-550 MPa and a toughness of 3.3-4.1 MPam.sup.1/2. In order to accomplish the second object, the present invention provides a method of manufacturing an alumina-silicon carbide nanocomposite for ball bonding capillaries of a wire bonding device, comprising the steps of: mechanically mixing 93-98 volume percent of .alpha.-alumina, having an average diameter of 0.1-0.3 .mu.m, and 2-7 volume percent of .beta.-silicon carbide, having an average diameter 0.1-1.5 .mu.m, in a dispersal organic solvent for 0.5-4 hours through a ball milling process; drying said dispersal organic solvent of the mixture, thus forming dried powder; filtering said dried powder by a screen; pressurizing the filtered powder in a mold at a pressure of 2500-3500 psi, thus preforming the filtered powder into a preformed material; forming the preformed material at a pressure of 45000-55000 psi for 1.5-3 minutes through a cold hydrostatic pressurizing process, thus forming a formed material; and sintering the formed material at a temperature of 1600-1800.degree. C. and at an atmospheric pressure for 3-5 hours under an inert atmosphere, thus forming an alumina-silicon carbide nanocomposite having a bending strength of 340-550 MPa and a toughness of 3.3-4.1 MPam.sup.1/2. BRIEF DESCRIPTION OF THE DRAWINGS The above object, and other features and advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. 1 is a graphical view, illustrating the bending strengths of alumina-silicon carbide nanocomposites of this invention as a function of the content of alumina-silicon carbides; FIG. 2 is a graphical view, illustrating the rupture toughness of alumina-silicon carbide nanocomposites of this invention as a function of the content of alumina-silicon carbides; FIG. 3 is a SEM (scanning electron microscope) photograph of the fracture surface of the nanocomposite in accordance with the present invention. FIG. 4 is a flowchart illustrating the manufacture of an alumina-silicon carbide nanocomposite in accordance with a preferred method of the present invention. DESCRIPTION OF THE PREFERRED EMBODIMENT Generally, a nanocomposite is a ceramic material, which has an improved strength, toughness and high temperature property with fine particles of a diameter of 50 to several hundred nanometer being positioned in the grains of a matrix. An alumina-silicon carbide nanocomposite for ball bonding capillaries of a wire bonding device in accordance with the present invention is comprised of 93-98 volume percent of .alpha.-alumina and 2-7 volume percent of .beta.-silicon carbide, preferably, 94-96 volume percent of .alpha.-alumina and 4-6 volume percent of .beta.-silicon carbide. When the content of the .beta.-silicon carbide is less than 2 volume percent, the toughness of the nanocomposite is higher than 4 MPam.sup.1/2, whereas its bending strength is rapidly reduced to less than 340 MPa, thus being not preferable. Also, when the content of the .beta.-silicon carbide is more than 7 volume percent, a desired toughness of the nanocomposite is maintained, whereas its bending strength tends to reduce because of lower sintering density. In the alumina-silicon carbide nanocomposite of this invention, the .alpha.-alumina has an average diameter of 0. 1-0.3 .mu.m and the .beta.-silicon carbide has an average diameter of 0.1-1.5 .mu.m. Preferably, the .alpha.-alumina has an average diameter of 0.15-0.25 .mu.m and the .beta.-silicon carbide has an average diameter of 0.15-0.25 .mu.m. When the average diameter of the .alpha.-alumina is smaller than 0.1 .mu.m, the toughness of the nanocomposite is not improved. Meanwhile, when the average diameter of the .alpha.-alumina is larger than 0.3 .mu.m, the strength of the nanocomposite is badly affected due to the increase of its particle size. On the other hand, when the average diameter of the .beta.-silicon carbide is smaller than 0.1 .mu.m, the toughness and strength of the nanocomposite are deteriorated. Meanwhile, when the average diameter of the .beta.-silicon carbide is larger than 1.5 .mu.m, the strength of the nanocomposite is reduced because it is impossible to form a uniform and dense structure. In mechanical properties of the alumina-silicon carbide nanocomposite of this invention, the bending strength is 340-550 MPa and the toughness is 3.3-4.1 MPam.sup.1/2. Preferably, the bending strength is 460-520 MPa and the toughness is 3.5-3.7 MPam.sup.1/2, more preferably, the bending strength is 510-550 MPa and the toughness is 3.5-3.7 MPam.sup.1/2. The method of manufacturing the above alumina-silicon carbide nanocomposite comprises the steps of mechanically mixing an alumina with a silicon carbide by means of a ball milling process, drying the dispersal organic solvent of the mixture, filtering the dried powder using a screen, pressurizing the filtered powder in a mold so as to preform the filtered powder, forming the preformed material by a cold hydrostatic pressurizing process, sintering the formed material and selectively annealing the sintered material. First, 93-98 volume percent of .alpha.-alumina, having an average diameter of 0.1-0.3 .mu.m, is mechanically mixed with 2-7 volume percent of .beta.-silicon carbide, having an average diameter 0.1-1.5 .mu.m, in a dispersal organic solvent such as a methanol or ethanol for 0.5-4 hours through a ball milling process. The strength and toughness of the resulting nanocomposite are not affected by the position of the silicon carbide in the alumina grain or grain boundary irrespective of the processing time of the ball milling process. Thus, the time of the ball milling process is not limited, however, the process is preferably performed for one hour. Second, the mixture is dried so as to eliminate the moisture and dispersal organic solvent used in the mixing step. Preferably, the mixture is dried with a rotating evaporator so as to prevent any deposition of alumina particles due to a difference in the density in a slurry. The filtering process is carried out with a screen of 120 mesh, thus eliminating cohesive materials from the dried powder. Thereafter, the filtered powder is filled into a hard metal mold and is pressurized at a pressure of 2500-3500 psi, thus being preformed. When the filtered powder is pressurized at a pressure of less than 2500 psi, the desired sintering density may be not obtained. Meanwhile, even though the pressurizing pressure for the filtered powder is higher than 3500 psi, it is impossible to expect any further improvement of the processing effect in proportion to such a high pressure. The preformed material is, thereafter, formed at a super-high pressure of 45000-55000 psi for 1.5-3 minutes through a cold hydrostatic pressurizing process. At such a super-high pressure, both the alumina and the silicon carbide are compressed uniformly and densely. Finally, the sintering process for the formed material is carried out at the temperature of 1600-1800.degree. C. for 3-5 hours under an inert gas atmosphere such as argon or nitrogen, etc. When the sintering point for the formed material is lower than 1600.degree. C., the sintering process cannot be appropriately carried out. Meanwhile, the sintering point of higher than 1800.degree. C. is not preferable because it is impossible to expect any further improvement of the processing effect in proportion to such a high temperature. Furthermore, such a high sintering temperature may quickly reduce the strength of the nanocomposite due to the unexpected increase of particle size. Also, an annealing process may be selectively carried out. Such annealing process for the sintered material is carried out at a temperature of 1250-1350.degree. C. for 1.5-2.5 hours through a heat treatment process. As a result of the heat treatment, the strength of the nanocomposite is remarkably increased because of the healing effect of surface defects. However, such an annealing process barely improves the rupture toughness of the nanocomposite. |
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