| PATENT ASSIGNEE'S COUNTRY | Japan |
| UPDATE | 07.99 |
| PATENT ASSIGNEE | This data is not available for free |
| PATENT CLAIMS |
Method for etching a substrate having first Si oxide layer (1) & second layer (2) consisting of material selected from: SiN, Si, Al, TiN, W, WSi, TiSi & photoresist, such that (1) is preferentially etched; method comprising - Loading substrate in process chamber - Feeding process gas into chamber - Turning gas into plasma by causing electric discharge - Etching substrate using said plasma Wherein said process gas is - Perfluoropropylene oxide & d. ratio of C2F4 & CF3 which are generated upon dissociation of gas, is controlled, using a discharge duration of each part of said gas as a parameter, in order to set an etching selection ratio of (1) to said (2) layer |
| PATENT PHOTOCOPY | Available on request |
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